Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP2030
Ver 2.
1
PRODUCT SUMMARY
VDSS 20V
ID RDS(ON) (mΩ) Max
5.
5 @ VGS=4.
5V 6.
5 @ VGS=3.
9V 46A 7.
0 @ VGS=3.
1V 7.
5 @ VGS=2.
5V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D1/D2
DFN 3X3
PIN 1
G1 G2 S1 S2
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source
Voltage VGS Gate-Source
Voltage
ID Drain Current-Continuous c
IDM -Pulsed a c
TA=25°C TA=70°C
PD
Maximum Power Dissipation
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTI...