Main Product Characteristics
NMOS
PMOS
VDSS
30V
-30V
RDS(on) 32.
4mohm 61.
6mohm
ID 4A -3.
6A
Features and Benefits
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product
SSF3036C
30V Complementary
MOSFET
DFN 3x2-8L Bottom View
N-Channel
Mosfet P-Channel
Mosfet
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely...