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SSF3036C

Silikron Semiconductor
Part Number SSF3036C
Manufacturer Silikron Semiconductor
Description MOSFET
Published Sep 22, 2016
Detailed Description Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm ID 4A -3.6A Features and Benefit...
Datasheet PDF File SSF3036C PDF File

SSF3036C
SSF3036C

Overview
Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 32.
4mohm 61.
6mohm ID 4A -3.
6A Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF3036C DFN 3x2-8L Bottom View N-Channel Mosfet P-Channel Mosfet Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating: Symbol ID @ TC = 25°C IDM VGS PD @TC = 25°C TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current ② Gate to source voltage Power Dissipation ③ Operating Junction and Storage Temperature Range Max.
N-Channel P-Channel 4 ① -3.
6 ① 16 -14.
4 ±12 ±12 2.
1 1.
3 -55 to + 150 -55 to + 150 Units A V W °C Thermal Resistance Symbol RθJA Characterizes Junction-to-ambient (t ≤ 5s) ④ Typ.
— N-channel 60 Max.
P-Channel 95 Units ℃/W ©Silikron Semiconductor CO.
,LTD.
2012.
02.
02 www.
silikron.
com Version : 1.
0 page 1 of 6 Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage N-channel P-Channel N-channel P-Channel N-channel P-Channel N-channel P-Channel N-channel N-channel P-Channel P-Channel Min.
30 -30 — — 0.
5 -0.
5 — — — -100 — -100 Typ.
— — 32.
4 61.
6 — — — — — — — — SSF3036C Max.
— — 36 65 2 -2 1 -1 100 — 100 — Units V mΩ V μA nA Conditions VGS = 0V, ID = 250μA VGS = 0V, ID = -250μA VGS= 4.
5V,ID = 4.
8A VGS= -4.
5V,ID = -2.
3A VDS...


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