SSS2302
N-Channel Enhancement Mode
MOSFET
Product Summary
VDS (V)
20V
SOT-23
D
ID (A)
2.
4A
RDS(ON) (m ) Max 60 @VGS = 4.
5V
G
115 @VGS = 2.
5V
S
D
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-23 package.
Pb Free.
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous @ TC = 25 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
20 8 2.
4 10 0.
95 0.
90 -55 to 150
Unit
V V A A A W
o
Drain-Source Diode Forward Current Maximum Power Dissipation
a
IS PD TJ, TSTG
Operating Junction and Storage Temperature Range
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambi...