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SSS2309

South Sea Semiconductor
Part Number SSS2309
Manufacturer South Sea Semiconductor
Description P-Channel MOSFET
Published Sep 18, 2014
Detailed Description SSS2309 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 130 @VGS = -4.5V -20V -2.3A 19...
Datasheet PDF File SSS2309 PDF File

SSS2309
SSS2309

Overview
SSS2309 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 130 @VGS = -4.
5V -20V -2.
3A 190 @VGS = -2.
5V G S D SOT-23 D FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-23 package.
S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -20 + - 10 -2.
3 -8 -1.
25 1.
25 -55 to 150 Unit V V A A A W o Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 100 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, August 2005 (Rev 2.
0) 1 of 7 SSS2309 Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Drain-Sour...


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