P Channel Enhancement Mode
MOSFET
ST2305A
-3.
5A
DESCRIPTION ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L FEATURE z 3 D G 1 1.
Gate 2.
Source S 2 3.
Drain z z z z z -15V/-3.
5A, RDS(ON) = 45m-ohm (Typ.
) @VGS = -4.
5V -15V/-3.
0A, R...