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ST2305

Stanson Technology
Part Number ST2305
Manufacturer Stanson Technology
Description P Channel Enchancement Mode MOSFET
Published Jun 18, 2006
Detailed Description www.DataSheet4U.com P Channel Enchancement Mode MOSFET -3.5A DESCRIPTION ST2305 The ST2305 is the P-Channel logic enh...
Datasheet PDF File ST2305 PDF File

ST2305
ST2305

Overview
www.
DataSheet4U.
com P Channel Enchancement Mode MOSFET -3.
5A DESCRIPTION ST2305 The ST2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION SOT-23-3L 3 FEATURE z -10V/-3.
5A, RDS(ON) = 50m-ohm @VGS = -4.
5V z -10V/-3.
0A, RDS(ON) = 70m-ohm @VGS = -2.
5V z -10V/-2.
0A, RDS(ON)= 105m-ohm @VGS=-1.
8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design D G 1 1.
Gate 2.
Source S 2 3.
Drain 3 S: Subcontractor Y: Year Code 4U 1 .
co m S05YA 2 A: Process Code Sh ata w.
D eet STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 ww www.
DataSheet4U.
com P Channel Enchancement Mode MOSFET -3.
5A ST2305 ABSOULTE MAXIMUM RATINGS (Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150¢J ) TA=25¢J TA=70¢J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25¢J TA=70¢J Symbol VDSS VGSS ID IDM IS PD TJ TSTG R£c JA Typical -10 +/-12 -3.
5 -2.
8 -10 -1.
6 1.
25 0.
8 150 -55/150 120 Unit V V A A A W ¢J ¢J ¢J /W ata w.
D \ Sh STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 2 ww eet 4U .
co m www.
DataSheet4U.
com P Channel Enchancement Mode MOSFET -3.
5A ST2305 ELECTRICAL CHARACTERISTICS ( Ta = 25¢J Unless otherwise noted ) Parameter Static Drain-Sou...


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