STB14NM50N
N-channel 500 V, 0.
28 Ω typ.
, 12 A MDmesh™ II Power
MOSFET in a D²PAK package
Datasheet - production data
TAB
3 1
D2PAK
Features
Order code VDS @ TJmax RDS(on) max ID
STB14NM50N 550 V
0.
32 Ω
12 A
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance
Applications
• Switching applications
Figure 1.
Internal schematic diagram
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Description
This device is an N-channel Power
MOSFET developed using the second generation of MDmesh™ technology.
This revolutionary Power
MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable f...