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STB14NM50N-2

Part Number	STB14NM50N-2
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Dec 4, 2020
Detailed Description	isc N-Channel MOSFET Transistor STB14NM50N-2 FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 5...
Datasheet	STB14NM50N-2 PDF File

Overview

isc N-Channel MOSFET Transistor STB14NM50N-2 FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 320mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±25 V 12 A 48 A 9...

Similar Datasheet

STB14NM50N N-Channel MOSFET - ST Microelectronics
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