IRF9530, SiHF9530
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 38 6.
8 21 Single
S
FEATURES
- 100 0.
30
com
• • • • • • • •
Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220
G
DESCRIPTION
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial a...