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SiHF9530S

Vishay
Part Number SiHF9530S
Manufacturer Vishay
Description Power MOSFET
Published Nov 17, 2015
Detailed Description Power MOSFET IRF9530S, SiHF9530S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC...
Datasheet PDF File SiHF9530S PDF File

SiHF9530S
SiHF9530S

Overview
Power MOSFET IRF9530S, SiHF9530S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 38 6.
8 21 Single 0.
30 S D2PAK (TO-263) G GD S D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.
See device orientation.
D2PAK (TO-263) SiHF9530S-GE3 IRF9530SPbF SiHF9530S-E3 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0 W in a typical surface mount application.
D2PAK (TO-263) SiHF9530STRL-GE3a IRF9530STRLPbFa SiHF9530STL-E3a D2PAK (TO-263) SiHF9530STRR-GE3a IRF9530STRRPbFa SiHF9530STR-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc VGS at - 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Notes a.
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