Ordering number : ENA2007A
TF410
N-Channel JFET
40V, 50 to 130μA, 0.
11mS, USFP
http://onsemi.
com
Applications
• Impedance conversion, infrared sensor applications
Features
• Ultrasmall package facilities miniaturization in end products : 1.
0mm×0.
6mm×0.
27mm (max 0.
3mm) • Small IGSS : max --500pA (VGSS= --20V, VDS=0V) • Small Ciss : typ.
0.
7pF (VDS= 10V, VGS=0V, f=1MHz) • Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source
Voltage Gate-to-Drain
Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature
VDSS VGDS IG ID PD Tj
Storage Temperature
Tstg
Conditions
Ratings 40
--40 10 1 30
150 --55 to +150
...