DatasheetsPDF.com

TF410

Sanyo
Part Number TF410
Manufacturer Sanyo
Description N-Channel Silicon Junction FET
Published May 27, 2016
Detailed Description Ordering number : ENA2007 TF410 SANYO Semiconductors DATA SHEET TF410 N-Channel Silicon Junction FET Impedance Conve...
Datasheet PDF File TF410 PDF File

TF410
TF410

Overview
Ordering number : ENA2007 TF410 SANYO Semiconductors DATA SHEET TF410 N-Channel Silicon Junction FET Impedance Converter, Infrared Sensor Applications Applications • Impedance conversion, infrared sensor applications Features • Ultrasmall package facilities miniaturization in end products : 1.
0mm×0.
6mm×0.
27mm (max 0.
3mm) • Small IGSS : max --500pA (VGSS= --20V, VDS=0V) • Small Ciss : typ.
0.
7pF (VDS= 10V, VGS=0V, f=1MHz) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG ID PD Tj Tstg Conditions Ratings 40 --40 10 1 30 150 --55 to +150 Unit V V mA mA mW °C °C LOT No.
LOT No.
Package Dimensions unit : mm (typ) 7055-003 0.
8 0.
1 0.
6 0.
2 3 0.
11 0 to 0.
02 1.
0 0.
1 1 0.
175 2 0.
15 0.
27 0.
05 1 2 1 : Source 2 : Drain 3 : Gate 3 SANYO : USFP 0.
05 Product & Package Information • Package : USFP • JEITA, JEDEC :- • Minimum Packing Quantity : 10,000 pcs.
/reel Packing Type: TL Marking 3 BTL Electrical Connection 3 1 : Source 2 : Drain 3 : Gate 1 2 Top view 12 http://semicon.
sanyo.
com/en/network 22912GB TKIM TC-00002703 No.
A2007-1/3 Electrical Characteristics at Ta=25°C TF410 Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDS IGSS VGS(off) IDSS | yfs | Ciss Crss Conditions IG=--10μA, VDS=0V VGS=--20V, VDS=0V VDS=10V, ID=1μA VDS=10V, VGS=0V VDS=10V, VGS=0V, f=1kHz VDS=10V, VGS=0V, f=1MHz min --40 Ratings typ 50 0.
05 --1.
4 0.
11 0.
7 0.
3 max --500 --4.
0 130 Unit V pA V μA mS pF pF Drain Current, ID -- μA Drain Current, ID -- μA ID -- VDS 120 100 VGS=0V 80 --0.
2V 60 --0.
4V 40 --0.
6V 20 --0.
8V --1.
0V 0 01234 120 Drain-to-SIoDurce--VoVltaGgeS, VDS -- V VDS=10V 5 IT16761 100 80 60 40 75°C 20 0 --...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)