isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
TK380P65Y
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 0.
38Ω ·Enhancement mode:
Vth = 3 to 4V (VDS = 10 V, ID=0.
36mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching
Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
650
V
VGS
Gate-Source
Voltage
±30
V
ID
Drain Current-Continuous
9.
7
A
IDM
Drain Current-Single Pulsed
38.
8
A
PD
Total Dissipation @TC=25℃
80
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTIC...