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TK380P65Y

Toshiba
Part Number TK380P65Y
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jul 8, 2019
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS) TK380P65Y TK380P65Y 1. Applications • Switching Voltage Regulators 2. Features ...
Datasheet PDF File TK380P65Y PDF File

TK380P65Y
TK380P65Y

Overview
MOSFETs Silicon N-Channel MOS (DTMOS) TK380P65Y TK380P65Y 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
29 Ω (typ.
) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.
36 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain 3: Source DPAK 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Tc = 25 ) (Note 1) ID 9.
7 A Drain current (DC) (Tc = 100 ) (Note 1) ID 6.
1 A Drain current (pulsed) (Tc = 25 ) (Note 1) IDP 38.
8 A Power dissipation (Tc = 25 ) PD 80 W Single-pulse avalanche energy (Note 2) EAS 96 mJ Single-pulse avalanche current IAS 2.
5 A Reverse drain current (DC) (Note 1) IDR 9.
7 Reverse drain current (pulsed) (Note 1) IDRP 38.
8 A Channel temperature ...


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