Bipolar Transistors Silicon NPN Epitaxial Type
TTC017
1.
Applications
• Power
Amplifiers • Power Switching
2.
Features
(1) High DC current gain
: hFE = 180 to 450 (IC = 0.
5 A)
(2) Low collector saturation
voltage : VCE(sat) = 0.
5 V (max) (IC = 1 A)
(3) High-speed switching
: tstg = 400 ns (typ.
) (IC = 1 A)
3.
Packaging and Internal Circuit
TTC017
New PW-Mold
1.
Base 2.
Collector (Heatsink) 3.
Emitter
Start of commercial production
2015-03
1
2015-03-24
Rev.
1.
0
TTC017
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
VCBO
160
V
Collector-emitter
voltage
VCEX
160
VCEO
80
Emitter-bas...