TXY8205
Dual N CHANNEL High Density Trench
MOSFET
TYPE TXY8205
BVDSS 20V
RDS(ON) 25mΩ@VGS=4.
5V 35mΩ@VGS=2.
5V
ID 6A 4A
Green Product
Pin Description
FEATURES High Density cell trench design for low Rds(on) Rugged and reliable Surface Mount package Lead Free Available(Green Product)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDSS
Drain-Source
Voltage ( VGS=0V )
VGSS
Gate- source
Voltage
ID (a)
Drain Current (continuous) at TC = 25 ℃
ID Drain Current (continuous) at TC = 100 ℃
IDM (b)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25 ℃
Tstg Storage Temperature
Tj Max.
Operating Junction Temperature
(a) Current limited by package (b) Pulse width limited by safe operat...