UTC 9015
PNP EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
FEATURES
*High total power dissipation.
(450mW) *Excellent hFE linearity.
*Complementary to UTC 9014
1
TO-92
1: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
Collector-base
voltage
VCBO
-50
Collector-emitter
voltage
VCEO
-45
Emitter-base
voltage
VEBO
-5
Collector current
Ic -100
Collector dissipation
Pc 450
Junction Temperature
Tj 150
Storage Temperature
TSTG
-55 ~ +150
2: BASE
3: COLLECTOR
UNIT V V V mA
mW °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base ...