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UTC9013

UTC
Part Number UTC9013
Manufacturer UTC
Description NPN EPITAXIAL SILICON TRANSISTOR
Published Jul 16, 2016
Detailed Description UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATUR...
Datasheet PDF File UTC9013 PDF File

UTC9013
UTC9013

Overview
UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation.
(625mW) *High collector current.
(500mA) *Excellent hFE linearity.
*Complementary to UTC 9012 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING Collector-base voltage VCBO 40 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 5 Collector current Ic 500 Collector dissipation Pc 625 Junction Temperature Tj 150 Storage Temperature TSTG -55 ~ +150 UNIT V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-base breakdown voltage BVCBO Ic=100µA, IE=0 40 Collector-emitter breakdown voltage BVCEO Ic=1mA, IB=0 20 Emitter-base breakdown voltage BVEBO IE=100µA, Ic=0 5 Collector cutoff current ICBO VCB=25V, IE=0 Emitter cutoff current IEBO ...


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