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VTE1285

Part Number VTE1285
Manufacturer PerkinElmer Optoelectronics
Description GaAlAs Infrared Emitting Diodes
Published Apr 17, 2005
Detailed Description GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Bullet Package — 880 nm VTE1285 PACKAGE DIMENSIONS inch (mm) DESCRIPTION ...
Datasheet VTE1285




Overview
GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Bullet Package — 880 nm VTE1285 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .
015" x .
015" This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.
The custom lens allows this cost effective device to have a very narrow half power beam emission of ±8°.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.
Coefficient of Power Output (Typ.
): -40°C to 100°C 20...






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