HIGH
VOLTAGE N-Channel
MOSFET
WFN1 N60
600V N-Channel
MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 10nC (Typ.
) □ BVDSS=600V,ID=1A □ RDS(on) : 8 Ω (Max) @VG=10V □ 100% Avalanche Tested
D
!
G!
●
◀▲
● ●
!
S
TO-92
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
VDSS
ID
VGS EAS IAR PD TJ,TSTG
TL
Parameter
Drain-Sourse
Voltage
Drain Current
-continuous (Tc=25℃)
-continuous (Tc=100℃)
Gate-Sourse
Voltage
Single Plused Avanche Energy
(Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25℃)
Operating and Storage Temperature ...