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WFN1N60

Winsemi
Part Number WFN1N60
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Apr 25, 2012
Detailed Description Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFN1N60 Silicon N-Channel MOSFET Features � � � � � 1....
Datasheet PDF File WFN1N60 PDF File

WFN1N60
WFN1N60

Overview
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr WFN1N60 Silicon N-Channel MOSFET Features � � � � � 1.
3A,600V, RDS(on)(Max8.
5Ω)@VGS=10V Ultra-low Gate charge(Typical 9.
1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
electronic Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Deratin...


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