WNM2029
Single N-Channel, 20V, 1.
85A, Power
MOSFET
VDS (V) 20
Rds(on) (ȍ) 0.
072@ VGS=4.
5V 0.
088@ VGS=2.
5V 0.
115@ VGS=1.
8V
ID (A) 1.
8 1.
5 1.
0
WNM2029
Http//:www.
willsemi.
com
Descriptions
The WNM2029 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM2029 is Pb-free.
Features
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold
Voltage z Small package SOT-323
Applications
SOT-323
D 3
12 GS
Pin configuration (To...