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WNM2025

TY Semiconductor
Part Number WNM2025
Manufacturer TY Semiconductor
Description N-Channel MOSFET
Published Jun 26, 2014
Detailed Description Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ ...
Datasheet PDF File WNM2025 PDF File

WNM2025
WNM2025

Overview
Product specification WNM2025 Single N-Channel, 20V, 3.
9 A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.
027@ VGS=4.
5V 0.
031@ VGS=2.
5V 0.
036@ VGS=1.
8V SOT-23-3L Descriptions The WNM2025 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench (ON) D 3 technology and design to provide excellent RDS with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM2025 is Pb-free.
1 G 2 S Pin configuration (Top view) Features z z z z z Trench Technology Supper high density cell design 1 3 W25* 2 Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-3L Marking W25 = Device Code * = Month (A~Z) Applications z z z z z Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit Power Switch Load Switch Charging Device Order information Package SOT-23-3L Shipping 3000/Reel&Tape WNM2025-3/TR http://www.
twtysemi.
com sales@twtysemi.
com 1 of 3 Product sp...


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