WNMD2176
Dual N-Channel, 20V, 2.
6A, Power
MOSFET
WNMD2176
www.
sh-willsemi.
com
VDS (V)
Typical RDS(on) (mΩ)
20 56@ VGS=4.
5V 76@ VGS=2.
5V
ESD Protected
Descriptions
The WNMD2176 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in DC-DC conversion,power switch and charging circuit.
Standard Product WNMD2176 is Pb-free.
Features
Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold
Voltage Small package SOT-23-6L
Applications
SOT-23-6L
D1 S1 D2 6 54
1 23 G1 S2 G2
Pin configuration (Top view)
6 54
2176 NDYW
1...