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WNMD2179

Part Number	WNMD2179
Manufacturer	Will Semiconductor
Description	Dual N-Channel MOSFET
Published	Apr 30, 2017
Detailed Description	WNMD2179 WNMD2179 Dual N-Channel, 20V, 6.3A, Power MOSFET www.sh-willsemi.com VDS (V) Rds(on) (ȍ) 0.0175@ VGS=4.5V...
Datasheet	WNMD2179 PDF File

Overview

WNMD2179 WNMD2179 Dual N-Channel, 20V, 6.
3A, Power MOSFET www.
sh-willsemi.
com VDS (V) Rds(on) (ȍ) 0.
0175@ VGS=4.
5V 0.
0195@ VGS=3.
1V 20 0.
0215@ VGS=2.
5V ESD Rating: 2000V HBM Descriptions The WNMD2179 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2179 is Pb-free.
Features TSOT-23-6L G1 D1/D2 G2 654 1 23 S1 D1/D2 S2 Pin configuration (Top view) 6 54  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Thresho...

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