WTC2306A
N-Channel Enhancement Mode Power
MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT 5 AMPERES DRAIN SOURCE
VOLTAGE 30
VOLTAGE
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Features:
SOURCE
2
3 1 2
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) 30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source
Voltage Gate-Source
Voltage Con tinuous Drain Current 3 ,V GS @4.
5V(T A ,V GS @4.
5V(T A Pulsed Drain Current
1,2
Unless Otherwise Specified) Symbol
VDS VGS ID IDM PD R θJA TJ , Tstg
Value
30 ± 12 5 4 20 1.
38 90 - 55~+150
Unit
V
A
Total Power Dissipation(T A =25 ˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and S...