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WTC2306

Weitron Technology
Part Number WTC2306
Manufacturer Weitron Technology
Description Enhancement Mode Power MOSFET
Published Sep 10, 2008
Detailed Description WTC2306 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE...
Datasheet PDF File WTC2306 PDF File

WTC2306
WTC2306


Overview
WTC2306 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.
8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 2 SOURCE Features: * Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package 3 1 2 Applications: * Power Management in Notebook Computer * Portable Equipment * Battery Powered System SOT-23 Maximum Ratings (TA Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation (TA=25°C) Maximum Junction-Ambient2 Operating Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ Tstg Value 30 ±12 5.
8 30 1.
4 140 -55~+150 -55~+150 Unit V V A A W °C/W °C °C Note: 1.
Repetitive Rating: Pulse width limited by the maximum junction temperature 2.
1-in2 2oz Cu PCB board www.
DataSheet4U.
com 3.
Guaranteed by design; not subject to production testing Device Marking WTC2306 = N06 WEITRON http://www.
weitron.
com.
tw 1/4 Rev.
B 17-Aug-09 WTC2306 Electrical Characteristics (TA=25°C Unless Otherwise Specified) Characteristic Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0V, ID=250µA Gate-Source Threshold Voltage VDS=VGS, ID=250µA Gate-Source Leakage Current +12V VDS=0V, VGS=Zero Gate Voltage Drain Current VDS=24V , VGS=0V Drain-Source On-Resistance VGS=2.
5V , ID=4.
0A VGS=4.
5V , ID=5.
0A VGS=10V , ID=5.
8A Gate Resistance VGS=0V, VDS=0V, f=1HMz Forward Transconductance VDS=5V, ID=5A V(BR)DSS VGS (th) IGSS IDSS 30 0.
7 - - 1.
4 ±100 1 V V nA µA R DS(on) 6 10 45 34 31 7 15 62 43 38 7.
5 - mΩ Rg gfs Ω S Switching Turn-On Delay Time(2) VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.
7Ω Rise Time VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.
7Ω Turn-O Time VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.
7Ω Fall Time VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.
7Ω Total Gate Charge(2) VDS=15V, ID=5.
8A,VGS=4.
5V Gate-Source Charge VDS=15V, ID=5.
8A,VGS=4.
5V Gate-Drain Charge VDS=15V, ID=5.
8A,VGS=...


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