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MBR20H100CTG

Vishay
Part Number MBR20H100CTG
Manufacturer Vishay
Description Dual Common Cathode High Voltage Schottky Rectifier
Published May 11, 2016
Detailed Description www.vishay.com MBR20H90CTG, MBR20H100CTG Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectif...
Datasheet PDF File MBR20H100CTG PDF File

MBR20H100CTG
MBR20H100CTG

Overview
www.
vishay.
com MBR20H90CTG, MBR20H100CTG Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB 3 2 1 MBR20H90CTG MBR20H100CTG PIN 1 PIN 2 PIN 3 CASE PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 90 V, 100 V IFSM 150 A VF 0.
70 V IR 3.
5 μA TJ max.
Package 175 °C TO-220AB Diode variations Dual common cathode FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder dip 275 °C max.
, 10 s, per JESD 22-B106 • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application.
MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current TC = 150°C total device per diode VRRM VRWM VDC IF(AV) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode IFSM Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz Voltage rate of change (rated VR) Operating junction and storage temperature range IRRM dV/dt TJ, TSTG MBR20H90CTG MBR20H100CTG 90 100 90 100 90 100 20 10 150 0.
5 10 000 -65 t...


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