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AP18P10AGH-HF

Advanced Power Electronics
Part Number AP18P10AGH-HF
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published May 12, 2016
Detailed Description Advanced Power Electronics Corp. AP18P10AGH/J-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower ...
Datasheet PDF File AP18P10AGH-HF PDF File

AP18P10AGH-HF
AP18P10AGH-HF


Overview
Advanced Power Electronics Corp.
AP18P10AGH/J-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
BVDSS RDS(ON) ID -100V 140mΩ -12A G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP18P10AGJ) is available for low-profile applications.
G D S TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range -100 +30 -12 -7.
4 -48 39 2 -55 to 150 -55 to 150 V V A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 3.
2 62.
5 110 Units ℃/W ℃/W ℃/W 1 201501133 AP18P10AGH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time F...


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