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RGT30NS65D

Rohm
Part Number RGT30NS65D
Manufacturer Rohm
Description Field Stop Trench IGBT
Published May 12, 2016
Detailed Description RGT30NS65D 650V 15A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 15A 1.65V 133W lFeature...
Datasheet PDF File RGT30NS65D PDF File

RGT30NS65D
RGT30NS65D

Overview
RGT30NS65D 650V 15A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.
) PD 650V 15A 1.
65V 133W lFeatures 1) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3) Short Circuit Withstand Time 5μs 4) Built in Very Fast & Soft Recovery FRD (RFN - Series) lOutline LPDS / TO-262 (2) (1) (3) lInner Circuit (2) *1 (1) (3) (1)(2)(3) (1) Gate (2) Collector (3) Emitter *1 Built in FRD 5) Pb - free Lead Plating ; RoHS Compliant lApplications General Inverter lPackaging Specifications Packaging Reel Size (mm) Taping / Tube 330 / - UPS Power Conditioner Tape Width (mm) 24 / - Type Basic Ordering Unit (pcs) 1,000 / 1,000 Welder Packing code TL / C9 Marking RGT30NS65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Collector - Emitter Voltage VCES 650 Gate - Emitter Voltage VGES 30 Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C IC IC ICP*1 IF IF IFP*1 PD PD 30 15 45 26 15 45 133 66 Operating Junction Temperature Tj -40 to +175 Storage Temperature *1 Pulse width limited by Tjmax.
Tstg -55 to +175 Unit V V A A A A A A W W °C °C www.
rohm.
com © 2015 ROHM Co.
, Ltd.
All rights reserved.
1/11 2015.
11 - Rev.
C RGT30NS65D lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case Data Sheet Symbol Rθ(j-c) Rθ(j-c) Values Min.
Typ.
Max.
Unit - - 1.
12 °C/W - - 2.
86 °C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min.
Typ.
Max.
Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - - Unit V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA Gate - Emitter Threshold Voltage Collector - Emitter Saturation Voltage VG...


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