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RSR010N10

Rohm
Part Number RSR010N10
Manufacturer Rohm
Description 4V Drive Nch MOSFET
Published May 12, 2016
Detailed Description Data Sheet 4V Drive Nch MOSFET RSR010N10  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-...
Datasheet PDF File RSR010N10 PDF File

RSR010N10
RSR010N10

Overview
Data Sheet 4V Drive Nch MOSFET RSR010N10  Structure Silicon N-channel MOSFET Features 1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
 Application Switching  Dimensions (Unit : mm) TSMT3 (3) (1) (2) Abbreviated symbol : ZJ  Packaging specifications Package Type Code Basic ordering unit (pieces) RSR010N10 Taping TL 3000   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg 100 20 1 4 0.
8 4 1 150 55 to 150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
Unit V V A A A A W C C  Inner circuit (3) (1) Gate (2) Source (3) Drain ∗1 ∗2 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board.
Symbol Rth (ch-a)* Limits 125 Unit C / W www.
rohm.
com © 2011 ROHM Co.
, Ltd.
All rights reserved.
1/6 2011.
05 - Rev.
A RSR010N10  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage IGSS V(BR)DSS IDSS VGS (th) Static drain-source on-state resistance RDS * (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min.
- 100 - 1.
0 1 - Typ.
- 370 400 410 140 20 12 6 9 22 15 3.
5 0.
9 0.
8 Max.
10 1 2.
5 520 560 580 - Unit Conditions A VGS=20V, VDS=0V V ID=1mA, VGS=0V A VDS=100V, VGS=0V V VDS=10V, ID=1mA ID=1A, VGS=10V m ID=1A, VGS=4.
5V ID=1A, VGS=4.
0V S ID=1A, VDS=10V pF VDS=25V pF VGS=0V pF f=1MHz ns ID=0.
5A, VDD 50V ns VGS=10V ns ...


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