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RQJ0203WGDQA

Part Number	RQJ0203WGDQA
Manufacturer	Renesas
Description	Silicon P-Channel MOS FET
Published	May 14, 2016
Detailed Description	RQJ0203WGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 142 mΩ typ (VGS = –4.5 V, ...
Datasheet	RQJ0203WGDQA PDF File

Overview

RQJ0203WGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 142 mΩ typ (VGS = –4.
5 V, ID = –1.
1 A) • Low drive current • High speed switching • 2.
5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “WG”.
Preliminary Datasheet R07DS0292EJ0500 Rev.
5.
00 Jan 10, 2014 3 D G 1.
Source 2 2.
Gate 3.
Drain S 1 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10 μs, duty cycle...

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RQJ0203WGDQA Silicon P-Channel MOS FET - Renesas

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