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RQJ0601DGDQS

Renesas
Part Number RQJ0601DGDQS
Manufacturer Renesas
Description Silicon P-Channel MOS FET
Published May 14, 2016
Detailed Description RQJ0601DGDQS Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 124 mΩ typ (VGS = –10 V, I...
Datasheet PDF File RQJ0601DGDQS PDF File

RQJ0601DGDQS
RQJ0601DGDQS

Overview
RQJ0601DGDQS Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 124 mΩ typ (VGS = –10 V, ID = –1.
4 A) • Low drive current • High speed switching • 4.
5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “DG”.
REJ03G1266-0300 Rev.
3.
00 Jun 05, 2006 2, 4 D 1.
Gate 1 G 2.
Drain 3.
Source 4.
Drain S 3 *UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID Note1 (pulse) Body - drain diode reverse drain current Channel dissipation Channel dissipation IDR Pch Note2 Pch Note1 (pulse) Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 1 s, duty cycle ≤ 1% 2.
When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Ratings –60 +10 / –20 –2.
8 –4.
2 –2.
8 1.
5 5 150 –55 to +150 (Ta = 25°C) Unit V V A A A W W °C °C Rev.
3.
00 Jun 05, 2006 page 1 of 6 RQJ0601DG...


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