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RQJ0603LGDQA

Renesas
Part Number RQJ0603LGDQA
Manufacturer Renesas
Description Silicon P-Channel MOS FET
Published May 14, 2016
Detailed Description RQJ0603LGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 158 mΩ typ (VGS = –10 V, I...
Datasheet PDF File RQJ0603LGDQA PDF File

RQJ0603LGDQA
RQJ0603LGDQA

Overview
RQJ0603LGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 158 mΩ typ (VGS = –10 V, ID = –0.
9 A) • Low drive current • High speed switching • 4.
5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “LG”.
Preliminary Datasheet R07DS0300EJ0600 Rev.
6.
00 Jan 10, 2014 3 D G 1.
Source 2 2.
Gate 3.
Drain S 1 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(Pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10 μs, duty cycle ...


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