DatasheetsPDF.com

RT3TDDM

Isahaya Electronics Corporation
Part Number RT3TDDM
Manufacturer Isahaya Electronics Corporation
Description Transistor
Published May 15, 2016
Detailed Description PRELIMINARY RT3TDDM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT...
Datasheet PDF File RT3TDDM PDF File

RT3TDDM
RT3TDDM

Overview
PRELIMINARY RT3TDDM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3TBBM is compound transistor built with RT1N237 chip and RT1P237 chip in SC-88 package.
OUTLINE DRAWING Unit：mm FEATURE Silicon epitaxial type Each transistor elements are independent.
Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit ⑥ RTr1 ⑤④ R1 R2 R2 R1 ①② RTr2 ③ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP) SYMBOL PARAMETER RATING VCBO Collector to Base voltage 50 VEBO Emitter to Base voltage 6 VCEO Collector to Emitter voltage 50 VIN Input voltage 12 IC Collector current 100 ICM Peak Collector current 200 PC Collector dissipation（Total, Ta=25℃） 150 Tj Junction temperature ＋150 Tstg Storage temperature -55～＋150 ※PNP built in transistor of ”－”sign is abbreviation.
UNIT V V V...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)