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RTE13J1M

Isahaya Electronics Corporation
Part Number RTE13J1M
Manufacturer Isahaya Electronics Corporation
Description Silicon P-channel MOSFET
Published May 15, 2016
Detailed Description PRELIMINARY DESCRIPTION RTE13J1M is compound transistor built with correspond INJ0001AX chip and 8.2V Zener diode in SC...
Datasheet PDF File RTE13J1M PDF File

RTE13J1M
RTE13J1M

Overview
PRELIMINARY DESCRIPTION RTE13J1M is compound transistor built with correspond INJ0001AX chip and 8.
2V Zener diode in SC-88 package.
FEATURE Silicon epitaxial type Each transistor elements are independent.
Mini package for easy mounting OUTLINE DRAWING ① ② ③ 2.
0 0.
65 0.
65 APPLICATION Power supply circuit, Driver circuit, etc RTE13J1M Composite Transistor Zener Diode Silicon P-channel MOSFET Unit：mm 2.
1 1.
25 ⑥ ⑤ ④ 0.
13 0.
24 0.
9 0.
65 0～0.
1 ⑥⑤④ Di MOSFET ①②③ ①：ANODE ②：ＮＣ ③：DRAIN ④：SOURCE ⑤：GATE ⑥：CATHODE JEITA：SC-88 JEDEC：－ MAXIMUM RATING(Ta=25℃) SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage -50 V VGSS ID Gate-source voltage Drain current(DC) MOSFET ±8 -100 V mA IDP Drain current(Pulse) -400(*1) mA PT Total power dissipation（Ta=25℃） 150(*2) MOSFET Tj Junction temperature Di +150 Tstg Storage temperature Common -55～+150 mW ℃ ℃ *1：Pw≦10μs, Duty cycle≦1% *2：Mounted on glass epoxy board(9mm×19mm×1mm) MARKING ⑥⑤ ④ X03 ①②③ ISAHAYA ELECTRONICS CORPOR...


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