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NP100N04NUJ

Part Number	NP100N04NUJ
Manufacturer	Renesas
Description	MOS FIELD EFFECT TRANSISTOR
Published	May 15, 2016
Detailed Description	NP100N04NUJ MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0364EJ0100 Rev.1.00 Jun 13, 2011 Description The N...
Datasheet	NP100N04NUJ PDF File

Overview

NP100N04NUJ MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0364EJ0100 Rev.
1.
00 Jun 13, 2011 Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features • Super low on-state resistance ⎯ RDS(on) = 3.
0 mΩ MAX.
(VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 5600 pF TYP.
(VDS = 25 V, VGS = 0 V) • High current rating: ID(DC) = ±100 A • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
NP100N04NUJ–S18-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode.
) Package TO-262 (MP-25SK) TYP.
1.
8g Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current ∗2 Repetitive Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 ±20 ±100 ±400 220 1.
8 175 −55 to +175 60 360 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-C) Rth(ch-A) Notes: ∗1.
TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2.
Tch(peak) ≤ 150°C, RG = 25 Ω 0.
68 83.
3 °C/W °C/W R07DS0364EJ0100 Rev.
1.
00 Jun 13, 2011 Page 1 of 6 NP100N04NUJ Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance ∗1 Drain to Source On-state Resistance ∗1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge Note: ∗1.
Pulsed test Symbol IDSS IGSS VGS(th) | yfs | RDS(on) Ci...

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NP100N04NUJ MOS FIELD EFFECT TRANSISTOR - Renesas

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