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RJK0406JPE

Part Number	RJK0406JPE
Manufacturer	Renesas
Description	Silicon N-Channel MOS FET
Published	May 15, 2016
Detailed Description	RJK0406JPE Silicon N Channel MOS FET High Speed Power Switching Features  For Automotive application  AEC-Q101 complia...
Datasheet	RJK0406JPE PDF File

Overview

RJK0406JPE Silicon N Channel MOS FET High Speed Power Switching Features  For Automotive application  AEC-Q101 compliant  Low on-resistance : RDS(on) = 1.
65 m typ.
 High current devices : ID = 160 A  Low input capacitance : Ciss = 6300 pF typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Tch = 25C, Rg  50  3.
Tc = 25C 4.
...

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RJK0406JPE Silicon N-Channel MOS FET - Renesas

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