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NCE3060G

NCE Power Semiconductor
Part Number NCE3060G
Manufacturer NCE Power Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published May 15, 2016
Detailed Description http://www.ncepower.com Pb Free Product NCE3060G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3060G...
Datasheet PDF File NCE3060G PDF File

NCE3060G
NCE3060G

Overview
http://www.
ncepower.
com Pb Free Product NCE3060G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3060G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =30V,ID =60A RDS(ON) <4.
0 mΩ @ VGS=10V RDS(ON) <5.
5 mΩ @ VGS=4.
5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Schematic diagram DFN5X6-8L top view Package Marking and Ordering Information Device Marking NCE3060G Device NCE3060G Device Package DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Drain-Source Voltage Parameter Gate-So...


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