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STP33N10FI

STMicroelectronics
Part Number STP33N10FI
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published May 17, 2016
Detailed Description STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N10 STP33N10FI VDSS 100 V 100 V R DS(...
Datasheet PDF File STP33N10FI PDF File

STP33N10FI
STP33N10FI

Overview
STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N10 STP33N10FI VDSS 100 V 100 V R DS( on) < 0.
06 Ω < 0.
06 Ω ID 33 A 18 A s TYPICAL RDS(on) = 0.
045 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE s APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.
) 3 2 1 TO-220 3 2 1 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol P ar amete r VD S VDG R Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) VGS ID ID ID M(•) Ptot Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max.
Operating Junction Temperature (•) Pulse width limited by safe operating area July 1993 Val ue STP33N10 ST P3 3N 10 F I 100 100 ± 20 33 18 23 12 132 132 150 45 1 0.
3  2000 -65 to 175 175 Unit V V V A A A W W/oC V oC oC 1/10 STP33N10/FI THERMAL DATA Rthj-case Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-220 1 ISOWATT220 3.
33 6 2.
5 0.
5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symb ol IA R EAS EAR IA R Pa ra met er Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Avalanche Energy (st arting Tj = 25 oC, ID = IAR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 oC, pulse width limited by Tj m...


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