DatasheetsPDF.com

MDP9N50B

MagnaChip
Part Number MDP9N50B
Manufacturer MagnaChip
Description N-Channel MOSFET
Published May 18, 2016
Detailed Description MDP9N50B / MDF9N50B N-channel MOSFET 500V MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description ...
Datasheet PDF File MDP9N50B PDF File

MDP9N50B
MDP9N50B

Overview
MDP9N50B / MDF9N50B N-channel MOSFET 500V MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.
0 A, 0.
85Ω General Description The MDP/F9N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDP/F9N50B is suitable device for SMPS, HID and general purpose applications.
Features VDS = 500V ID = 9.
0A @VGS = 10V RDS(ON) ≤ 0.
85Ω @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP9N50B MDF9N50B 500 ±30 9.
0 9.
0* 5.
5 5.
5* 36 36* 120 38 0.
95 0.
3 12 4.
5 300 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Dec 2011.
Version 1.
0 Symbol RθJA RθJC MDP9N50B 62.
5 1.
05 MDF9N50B 62.
5 3.
3 Unit oC/W 1 MagnaChip Semiconductor Ltd.
MDP9N50B / MDF9N50B N-channel MOSFET 500V Ordering Information Part Number MDP9N50BTH MDF9N50BTH Temp.
Range -55~150oC -55~150oC Package TO-220 TO-220F Packing Tube Tube RoHS Status Halogen Free Halogen Free Electrical Characteristics (Ta = 25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteri...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)