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BC857S

SeCoS
Part Number BC857S
Manufacturer SeCoS
Description PNP Silicon Multi-Chip Transistor
Published May 19, 2016
Detailed Description Elektronische Bauelemente BC857S PNP Silicon Multi-Chip Transistor RoHS Compliant Product * Features Power dissipatio...
Datasheet PDF File BC857S PDF File

BC857S
BC857S

Overview
Elektronische Bauelemente BC857S PNP Silicon Multi-Chip Transistor RoHS Compliant Product * Features Power dissipation PCM : 0.
3 W (Tamp.
= 25OC) Collector current ICM : -0.
2 A Collector-base voltage V(BR)CBO : -50 V Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150 CO C 1 B2 E2 .
055(1.
40) .
047(1.
20) SOT-363 .
026TYP (0.
65TYP) .
021REF (0.
525)REF 8o 0o .
096(2.
45) .
085(2.
15) .
053(1.
35) .
045(1.
15) .
014(0.
35) .
006(0.
15) .
087(2.
20) .
079(2.
00) .
043(1.
10) .
035(0.
90) .
018(0.
46) .
010(0.
26) .
006(0.
15) .
003(0.
08) .
004(0.
10) .
000(0.
00) .
039(1.
00) .
035(0.
90) Marking : 3C E 1 B1 C2 Dimensions in inches and (millimeters) Electrical Characteristics( Tamb=25OC unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic=-10µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA, IB=0 Emitter-base breakdown voltage Collector cut-off current V(BR)EBO ICBO IE=-10µA, IC=0 VCB=-30V, IE=0 DC current gain hFE VCE=-5...


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