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DK48N88

Thinki Semiconductor
Part Number DK48N88
Manufacturer Thinki Semiconductor
Description N-Channel Trench Process Power MOSFET
Published May 19, 2016
Detailed Description DK48N88 ® Pb Free Plating Product DK48N88 Pb N-Channel Trench Process Power MOSFET Transistors General Description...
Datasheet PDF File DK48N88 PDF File

DK48N88
DK48N88

Overview
DK48N88 ® Pb Free Plating Product DK48N88 Pb N-Channel Trench Process Power MOSFET Transistors General Description The DK48N88 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
Features ● VDS=70V；ID=88A@ VGS=10V； RDS(ON)<5.
2mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 48V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply DK48N88 (TO-220 HeatSink) G DS Schematic Diagram VDSS = 70V IDSS = 88A RDS(ON) = 4.
8mΩ Table 1.
Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID (DC) Drain Current (DC) at Tc=25℃ ID (DC) IDM (pluse) Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery Voltage PD Maximum Power Dissipation(Tc=25℃) Derating Factor EAS Single Pulse Avalanche Energy (Note 2) TJ,TSTG Operating Junction and Storage Temperature Range Notes 1.
Repetitive Rating: Pulse width limited by maximum junction temperature 2.
EAS condition:TJ=25℃,VDD=33V,VG=10V,ID=48.
5A Rev.
05 © 2006 Thinki Semiconductor Co.
,Ltd.
Value 70 ±25 88 85 320 30 145 1.
9 590 -55 To 175 Unit V V A A A V/ns W W/℃ mJ ℃ Page 1/2 http://www.
thinkisemi.
com/ Table 2.
Thermal Characteristic Symbol Parameter RθJC Thermal Resistance,Junction-to-Case Value 0.
6 Unit ℃/W Table 3.
Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current(Tc=25℃) VDS=68V,VGS=0V IDSS Zero Gate Voltage Drain Current(Tc=125℃) VDS=68V,VGS=0V IGSS Gate-Body Leakage Current VGS=±25V,VDS=0V VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA ...


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