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CM50TF-24H

Mitsubishi Electric Semiconductor
Part Number CM50TF-24H
Manufacturer Mitsubishi Electric Semiconductor
Description IGBT Module
Published Mar 23, 2005
Detailed Description MITSUBISHI IGBT MODULES CM50TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE X Z - M4 THD (7 TYP.) Gu P E u P A C Q X...
Datasheet PDF File CM50TF-24H PDF File

CM50TF-24H
CM50TF-24H

Overview
MITSUBISHI IGBT MODULES CM50TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE X Z - M4 THD (7 TYP.
) Gu P E u P A C Q X S Q X N Gv P E v P Gw P E w P P Gu N E u N P Gv N E v N Gw N E w N P G B E D G U V W N R K J N U T N AA L TAB #110, t = 0.
5 M M AA L Y DIA.
(4 TYP.
) V F H AB P GuP P EuP GvP EvP GwP EwP Description: Mitsubishi IGBT Modules are designed for use in switching applications.
Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.
e.
CM50TF-24H is a 1200V (VCES), 50 Ampere Six-IGBT Module.
Type CM Current Rating Amperes 50 VCES Volts (x 50) 24 GuN EuN U N GvN EvN V GwN EwN W N Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.
02±0.
02 3.
58±0.
02 3.
15±0.
01 2.
913±0.
01 1.
69 Millimeters 102.
0±0.
5 91.
0±0.
5 80.
0±0.
25 74.
0±0.
25 43.
0 Dimensions P Q R S T U V X Y Z AA AB Inches 0.
65 0.
55 0.
47 0.
43 0.
39 0.
33 0.
32 0.
24 0.
22 Dia.
M4 Metric 0.
08 0.
28 Millimeters 16.
5 14.
0 12.
0 11.
0 10.
0 8.
5 8.
1 6.
0 Dia.
5.
5 M4 2.
0 7.
0 1.
18 +0.
06/-0.
02 30 +1.
5/-0.
5 1.
18 1.
16 1.
06 0.
96 0.
87 0.
79 0.
67 30.
0 29.
5 27.
0 24.
5 22.
0 20.
0 17.
0 Sep.
1998 MITSUBISHI IGBT MODULES CM50TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25°C) Peak Collector ...


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