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CM75BU-12H

Mitsubishi Electric Semiconductor
Part Number CM75BU-12H
Manufacturer Mitsubishi Electric Semiconductor
Description IGBT Module
Published Mar 23, 2005
Detailed Description MITSUBISHI IGBT MODULES CM75BU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F E H E G R L S(4 - Mounting Holes) M ...
Datasheet PDF File CM75BU-12H PDF File

CM75BU-12H
CM75BU-12H

Overview
MITSUBISHI IGBT MODULES CM75BU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F E H E G R L S(4 - Mounting Holes) M GuP EuP D GvP EvP GuN EuN U V C TC Measured Point GvN EvN P TC Measured Point Q 4 - M4 NUTS J E J H K F G V T U N L TAB#110 t=0.
5 V W X P Description: Mitsubishi IGBT Modules are designed for use in switching applications.
Each module consists of four IGBTs in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.
e.
CM75BU-12H is a 600V (VCES), 75 Ampere FourIGBT Module.
Type CM Current Rating Amperes 75 VCES Volts (x 50) 12 GuP EuP U GvP EvP V GuN EuN N GvN EvN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 2.
83 2.
17±0.
01 3.
58 2.
91±0.
01 0.
43 0.
79 0.
69 0.
75 0.
39 0.
41 0.
05 Millimeters 72.
0 55±0.
25 91.
0 74.
0±0.
25 11.
0 20.
0 17.
5 19.
1 10.
0 10.
5 1.
25 Dimensions M N P Q R S T U V W X Inches 0.
74 0.
02 1.
55 0.
63 0.
57 0.
22 Dia.
0.
32 1.
02 0.
59 0.
20 1.
61 Millimeters 18.
7 0.
5 39.
3 16.
0 14.
4 5.
5 Dia.
8.
1 26.
0 15.
0 5.
0 41.
0 Sep.
1998 MITSUBISHI IGBT MODULES CM75BU-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C) Mounting Torque, M4 Main Terminal Mou...


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