DatasheetsPDF.com

AP4500GM-HF

Part Number	AP4500GM-HF
Manufacturer	Advanced Power Electronics
Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	May 23, 2016
Detailed Description	Advanced Power Electronics Corp. AP4500GM-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simp...
Datasheet	AP4500GM-HF PDF File

Overview

Advanced Power Electronics Corp.
AP4500GM-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free SO-8 G2 S2 G1 S1 Description AP4500 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 20V 30mΩ 6A -20V 50mΩ -5A D2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
G1 G2 S1 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 20 -20 V VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Gate-Source Voltage Drain Current, VGS @ 4.
5V3 Drain Current, VGS @ 4.
5V3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor +12 +12 6 -5 4.
8 -4 20 -20 2.
0 0.
016 V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.
5 Unit ℃/W 1 201501087 AP4500GM-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=250uA Static Drain-Source On-Resistance2 VGS=4.
5V, ID=6A VGS=2.
5V, ID=5.
2A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=6A Drain-Source Leakage Current VDS=20V, VGS=0V Drain-Source Leakage Current (Tj=70oC) VDS...

Similar Datasheet

AP4500GM-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)