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FDB2572

Kexin
Part Number FDB2572
Manufacturer Kexin
Description N-Channel MOSFET
Published May 23, 2016
Detailed Description SMD Type MOSFET N-Channel PowerTrench MOSFET KDB2572(FDB2572) Features rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(to...
Datasheet PDF File FDB2572 PDF File

FDB2572
FDB2572

Overview
SMD Type MOSFET N-Channel PowerTrench MOSFET KDB2572(FDB2572) Features rDS(ON) = 45m (Typ.
), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.
), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.
25.
28 -0.
2 +0.
28.
7 -0.
2 TO-263 +0.
2 4.
57+0.
1 -0.
2 1.
27-0.
1 Unit: mm +0.
11.
27 -0.
1 +0.
22.
54 -0.
2 15.
25-+00.
.
22 5.
60 1.
27+0.
1 -0.
1 0.
1max 2.
54+0.
2 -0.
2 5.
08+0.
1 -0.
1 0.
81+0.
1 -0.
1 2.
54 0.
4+0.
2 -0.
2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current-Continuous TC=25 TA=25 Power dissipation Derate above 25 Thermal Resistance Junction to Ambient Thermal Resistance, Junction-to-Case Channel temperature Storage temperature Symbol VDSS VGSS ID PD RèJA RèJC Tch Tstg Rating 150 20 29 4 135 0.
9 43 1.
11 175 -55 to +175 Unit V V A A W W/ /W /W www.
kexin.
com.
cn 1 SMD Type KDB2572(FDB2572) Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Symbol VDSS Drain cut-off current IDSS Gate leakage current Gate threshold voltage IGSS VGS(th) Drain to source on-state resistance RDS(on) Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge Ciss Coss Crss Qg(TOT) Qg(TH) Qgs Qgs2 Qgd tON td(ON) tr td(OFF) tf tOFF VSD trr QRR Testconditons ID=250ìA VGS=0V VDS=120V,VGS=0 VDS=120V,VGS=0,TC=150 VGS= 20V VDS = VGS, ID = 250ìA VGS=10V,ID=9A VGS=6V,ID=4A VGS=10V,ID=9A,TC=175 VDS=25V,VGS=0,f=1MHZ VGS = 0V to 10V VGS = 0V to 2V VDS = 75 V, ID = 9A,Ig=1.
0mA VDD = 75 V, ID = 9 A, VGS = 10 V, RGEN = 11 ISD=9A ISD=4A ISD = 9A, dISD/dt =100A/ìs ISD = 9A, dISD/dt =100A/ìs MOSFET Min Typ Max Unit 150 V 1A 250 A 100 nA 2.
0 4.
0 ...


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