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KDB3672

Kexin
Part Number KDB3672
Manufacturer Kexin
Description N-Channel MOSFET
Published May 23, 2016
Detailed Description SMD Type MOSFET N-Channel PowerTrench MOSFET KDB3672 (FDB3672) Features rDS(ON) =24m (Typ.), VGS = 10V, ID =44A Qg(to...
Datasheet PDF File KDB3672 PDF File

KDB3672
KDB3672

Overview
SMD Type MOSFET N-Channel PowerTrench MOSFET KDB3672 (FDB3672) Features rDS(ON) =24m (Typ.
), VGS = 10V, ID =44A Qg(tot) = 24nC (Typ.
), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.
25.
28 -0.
2 +0.
28.
7 -0.
2 TO-263 +0.
2 4.
57+0.
1 -0.
2 1.
27-0.
1 Unit: mm +0.
11.
27 -0.
1 +0.
22.
54 -0.
2 15.
25-+00.
.
22 5.
60 1.
27+0.
1 -0.
1 0.
1max 2.
54+0.
2 -0.
2 5.
08+0.
1 -0.
1 0.
81+0.
1 -0.
1 2.
54 0.
4+0.
2 -0.
2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current-Continuous TC=25 TA=25 Power dissipation Derate above 25 Thermal Resistance Junction to Ambient Thermal Resistance, Junction-to-Case Channel temperature Storage temperature Symbol VDSS VGSS ID PD RèJA RèJC Tch Tstg Rating 100 20 44 7.
2 120 0.
8 62 1.
25 175 -55 to +175 Unit V V A A W W/ /W /W www.
kexin.
com.
cn 1 SMD Type KDB3672 (FDB3672) Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Symbol VDSS Drain cut-off current IDSS Gate leakage current Gate threshold voltage IGSS VGS(th) Drain to source on-state resistance RDS(on) Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge Ciss Coss Crss Qg(TOT) Qg(TH) Qgs Qgs2 Qgd tON td(ON) tr td(OFF) tf tOFF VSD trr QRR Testconditons ID=250ìA VGS=0V VDS=80V,VGS=0 VDS=80V,VGS=0,TC=150 VGS= 20V VDS = VGS, ID = 250ìA VGS=10V,ID=44A VGS=6V,ID=21A VGS=10V,ID=44A,TC=175 VDS=25V,VGS=0,f=1MHZ VGS = 0V to 10V VGS = 0V to 2V VDS = 50 V, ID = 44A,Ig=1.
0mA VDD = 50 V, ID = 44A, VGS = 10 V, RGS = 11.
0 ISD=44A ISD=21A ISD = 44A, dISD/dt =100A/ìs ISD = 44A, dISD/dt =100A/ìs MOSFET Min Typ Max Unit 100 V 1A 250 A 100 nA...


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