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FDB4030L

Fairchild Semiconductor
Part Number FDB4030L
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published May 23, 2016
Detailed Description March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Fea...
Datasheet PDF File FDB4030L PDF File

FDB4030L
FDB4030L

Overview
March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
20 A, 30 V.
RDS(ON) = 0.
035 Ω RDS(ON) = 0.
055 @ Ω VGS=10 V @ VGS=4.
5V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
High density cell design for extremely low RDS(ON).
175°C maximum junction temperature rating.
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